sst/u401 series siliconix s-52424erev. e, 14-apr-97 1 monolithic n-channel jfet duals sst404 sst406 u401 U404 u406 product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i g typ (pa) v gs1 v gs2 max (mv) u401 0.5 to 2.5 40 1 2 5 sst/U404 0.5 to 2.5 40 1 2 15 sst/u406 0.5 to 2.5 40 1 2 40 features benefits applications monolithic design high slew rate low offset/drift voltage low gate leakage: 2 pa low noise high cmrr: 102 db tight differential match vs. current improved op amp speed, settling time accuracy minimum input error/trimming requirement insignificant signal loss/error voltage high system sensitivity minimum error with large input signal wideband differential amps high-speed,temp-compensated, single-ended input amps high-speed comparators impedance converters description the sst/u401 series of high-performance monolithic dual jfets features extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. this series has a wide selection of offset and drift specifications with the u401 featuring a 5-mv offset and 10- v/ c drift. the u series' hermetically sealed to-71 package is available with full military processing (see military information). the sst series so-8 package provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. the so-8 package is available with tape-and-reel options for compatibility with automatic assembly methods (see packaging information). for similar high-gain products in to-78 packaging, see the 2n5911/5912 data sheet. to-71 top view u401, U404, u406 g 1 s 1 d 1 g 2 d 2 s 2 1 2 3 6 5 4 s 1 nc d 1 g 2 g 1 d 2 nc s 2 narrow body soic 5 6 7 8 2 3 4 1 top view sst404, sst406 absolute maximum ratings gate-drain, gate-source voltage 40 v . . . . . . . . . . . . . . . . . . . . . . . . gate current 10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 sec.) 300 c . . . . . . . . . . . . . storage temperature : u prefix 65 to 200 c . . . . . . . . . . . . . . sst prefix 55 to 150 c . . . . . . . . . . . . operating junction temperature 55 to 150 c . . . . . . . . . . . . . . . . . . power dissipation : per side a 300 mw . . . . . . . . . . . . . . . . . total b 500 mw . . . . . . . . . . . . . . . . . . . . notes a. derate 2.4 mw/ c above 25 c b. derate 4 mw/ c above 25 c updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70247. applications information may also be obtained via faxback, request document #70599.
sst/u401 series 2 siliconix s-52424erev. e, 14-apr-97 specifications a limits u401 sst/U404 sst/u406 parameter symbol test conditions typ b min max min max min max unit static gate - source v (br)gss i g = 1 a, v ds = 0 v 58 40 40 40 gate - source breakdown voltage v (br)g1 g2 i g = 1 a, v ds = 0 v v gs = 0 v 45 30 30 30 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 1 na 1.5 0.5 2.5 0.5 2.5 0.5 2.5 saturation drain current c i dss v ds = 10 v, v gs = 0 v 3.5 0.5 10 0.5 10 0.5 10 ma gate reverse current i gss v gs = 30 v, v ds = 0 v 2 25 25 25 pa gate reverse current i gss t a = 125 c 1 na gate operating c i g v dg = v, i d = 200 a 2 15 15 15 pa current i g t a = 125 c 0.8 10 10 10 na drain-source on-resistance r ds(on) v gs = 0 v, i d = 0.1 ma 250 gate-source voltage v gs v dg = v, i d = 200 a 1 2.3 2.3 2.3 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 15 v, i d = 200 a f=1khz 1.5 1 2 1 2 1 2 ms common-source output conductance g os f = 1 khz 1.3 2 2 2 s common-source forward transconductance g fs v ds = 10 v, v gs = 0 v f=1khz 4 2 7 2 7 2 7 ms common-source output conductance g os f = 1 khz 5 30 30 30 s common-source input capacitance c iss v ds =15v i d = 200 a 4 8 8 8 common-source reverse transfer capacitance c rss v ds = 15 v , i d = 200 a f = 1 mhz 1.5 3 3 3 pf equivalent input noise voltage e n v ds = 15 v, i d = 200 a f = 10 hz 10 20 20 20 nv M hz matching differential gate-source voltage
v dg = 10 v, i d = 200 a 5 15 40 mv gate-source volta g e
v dg = 10 v sst404 20 gate source voltage differential change with temperature
v dg 10 v i d = 200 a t 55 to 125 c sst406 40 v/ c w i t h t emperature t a = 55 to 125 c all u common mode rejection ratio cmrr v dg = 10 to 20 v, i d = 200 a 102 db notes a. t a = 25 c unless otherwise noted. nnr b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%.
sst/u401 series siliconix s-52424erev. e, 14-apr-97 3 typical characteristics 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v 1.2 v 1.4 v drain current and transconductance vs. gate-source cutoff voltage v gs(off) gate-source cutoff voltage (v) saturation drain current (ma) i dss g fs forward transconductance (ms) 10 0 2.5 2.0 1.5 1.0 0.5 8 6 4 0 8.0 6.4 4.8 3.2 0 2 1.6 i dss @ v ds = 15 v, v gs = 0 v g fs @ v dg = 15 v, v gs = 0 v f = 1 khz g fs i dss gate leakage current v dg drain-gate voltage (v) gate leakage i g 050 0.1 pa 10 pa 1 pa i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c i g @ i d = 500 ma 10 20 30 40 100 pa 1 na 10 na 100 na output characteristics output characteristics v ds drain-source voltage (v) v ds drain-source voltage (v) drain current (ma) i d drain current (ma) i d 4 016 8 420 3.2 2.4 1.6 0.8 0 7 016 8 420 6 5 2 1 0 v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v 1.2 v 12 12 3 4 v gs(off) = 1.5 v v gs(off) = 2 v output characteristics output characteristics v ds drain-source voltage (v) drain current (ma) i d v ds drain-source voltage (v) drain current (ma) i d 3 01 0.8 0.6 0.4 0.2 2.4 1.8 1.2 0 0.6 v gs(off) = 1.5 v v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v 4 01 0.8 0.6 0.4 0.2 3.2 2.4 1.6 0 0.8 v gs = 0 v v gs(off) = 2 v 1.2 v 1.2 v 50 ma 50 ma
sst/u401 series 4 siliconix s-52424erev. e, 14-apr-97 typical characteristics (cont'd) circuit voltage gain vs. drain current a v voltage gain i d drain current (ma) 0.1 1 0.01 150 120 90 60 30 0 v gs(off) = 1.5 v 2.0 v on-resistance vs. drain current i d drain current (ma) 0.01 0.1 1 500 400 300 200 100 0 v gs(off) = 1.0 v 1.5 v 2.0 v transfer characteristics gate-source differential voltage vs. drain current voltage differential with temperature vs. drain current common mode rejection ratio vs. drain current (mv) v gs1 v gs2 cmrr (db) v gs gate-source voltage (v) i d drain current (ma) i d drain current (ma) i d drain current (ma) 0.01 0.1 1 100 10 1 5 0 1.2 0.8 0.4 1.6 2 4 3 2 1 0 sst/U404 0.01 0.1 1 130 120 80 110 100 90 0.01 0.1 1 100 10 1 t a = 55 c 125 c v gs(off) = 1.5 v v dg = 15 v t a = 25 to 125 c t a = 55 to 25 c v dg = 15 v 5 10 v drain current (ma) i d u401 sst/U404 u401 a v g fs r l 1 r l g os assume v dd = 15 v, v ds = 5 v r l 10 v i d v ds = 15 v 25 c v/ c () t v gs1 v gs2 r ds(on) drain-source on-resistance ( ) v gs1 v gs2 v dg cmrr = 20 log v dg = 10 20 v
sst/u401 series siliconix s-52424erev. e, 14-apr-97 5 typical characteristics (cont'd) 10 100 1 k 100 k 10 k 0 12 16 20 8 4 common-source input capacitance vs. gate-source voltage common-source reverse feedback capacitance vs. gate-source voltage equivalent input noise voltage vs. frequency input capacitance (pf) c iss reverse feedback capacitance (pf) c rss v gs gate-source voltage (v) v gs gate-source voltage (v) f frequency (hz) 10 0 12 16 20 8 4 8 6 4 2 0 20 16 12 8 4 0 15 v f = 1 mhz v ds = 0 v 15 v v dg = 15 v v gs = 0 v i d @ 200 a output conductance vs. drain current i d drain current (ma) 5 4 3 2 1 0 0.01 0.1 1 v gs(off) = 1.5 v t a = 55 c 125 c f = 1 mhz 10 8 6 4 2 0 common-source forward transconductance vs. drain current i d drain current (ma) g fs forward transconductance (ms) 0.01 0.1 1 4.0 3.2 2.4 1.6 0.8 0 t a = 55 c 125 c on-resistance and output conductance vs. gate-source cutoff voltage v gs(off) gate-source cutoff voltage (v) 500 0 1.5 2.5 2.0 1.0 0.5 400 200 100 0 30 24 18 6 0 r ds g os 300 12 r ds @ i d = 100 a v gs = 0 v g os @ v dg = 15 v v gs = 0 v f = 1 khz 5 v v ds = 0 v 5 v 25 c 25 c v ds = 15 v f = 1 khz v gs(off) = 1.5 v v ds = 15 v f = 1 khz nv e n / hz ) ( noise voltage r ds(on) drain-source on-resistance ( ) s) g fs forward transconductance ( s) g output conductance (
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